E32-S15L-2 optical fiber unit using OMRON''s unique polarized multilayer film technology (FAO)
Can not be affected by the color of the workpiece, the subtle luster
To carry out a stable testSensing method: BGS reflective (fixed distance).
Connection method: Connector (M8, 4 pins).
Sensing distance: 10 to 200 mm E5EN-R3HBL-N User's Manual.
Model: PNP output .
Stainless Steel Housing Ideal for Food Industry PAT Pending E5EN-R3HBL-N
Strong resistance against detergents, disinfectants, and jet liquid flow.
Product lineup includes BGS Reflective Models and Through-beam,
Models with built-in slits.
Certified by Ecolab Europe. Appearance: Shielded, M12.
Sensing distance: 4 mm.
Output configuration: DC 2-wire (no polarity).
Operation mode: NO E5EN-R3HBL-N User's Manual.
Spatter-resistant Fluororesin,
coated Proximity Sensor.
Superior spatter resistance.
Long Sensing-distance Models added for sensing,
distances up to 15 mm.
Pre-wired Smartclick Connector Models are also available. Size: M30 (brass), single distance, non shield type.
Detection distance: 20mm.
Connection mode: lead type (cable length is 2M and 5m two).
Thread length: Standard type E5EN-R3HBL-N User's Manual.
Output type: PNP.
Action mode NC.
Set up the new standard of the world economy proximity sensor.
OMRON as a pioneer and leader in proximity sensor industry,
Now bring you a new E2B proximity sensor with high performance to price ratio.
This series of products are complete,
Aimed at reasonable prices to meet customer demand for high quality and high reliability of the sensor.
We have tested the product not only on the protection level (IP67) specific item,
The oil spray test was carried ouut on the condition of the work site E5EN-R3HBL-N Manual.
Simulation test was carried out in the environment of high oil mist concentration. E3F3-T81 detection methods: the firing pattern,
Wire lead out type,
Type: Plastic appearance; PNP output,
Threaded cylindrical phhotoelectric sensor, built-in amplifier,
Photoelectric sensor with proximity sensor appearance
High anti interference with optoelectronic -IC technology