Power supply voltage: 12 to 24 VDC.
Output configuration: NPN open collector.
Output code: BCD.
Resolution (divisions): 360.
Connection method: Pre-wired Connector Model (2 m) .
Rugged Rotary Encoder.
Absolute model.
External diameter of 60 mm.
Resolution of up to 1,024 (10-bit).
IP65 oil-proof protection OMRON E2V-X8B1-M1.
Strong shaft.
Radial: 120 N, Thrust: 50 N. E3JK-T41J for firing type,
E3JK communication mode: mode; ON,
Miniature amplifier built-in type photoelectric switchSensing method: Distance-settable(BGS Models) E2V-X8B1-M1
Connection method: Pre-wired (2 m).
Response time: 0.5 ms.
Sensing distance: 125 to 40 mm (Min. distance set),
25 to 300 mm (Max. distance set) .
Model: PNP output .
Compact and Reliable,
Laser Photoelectric Sensor OMRON E2V-X8B1-M1.
Safety and reliability with laser class 1 (JIS and IEC).
Product lineup includes models with distance setting without,
influence of color.
Maximum ambient operating temperature of 55°C and water,
proof construction in E3Z class.
Output configuration: DC 3-wire, NPN, Open-collector output.
Flat Capacitive Sensor with Separate.
Amplifier.
Ideal for Mounting on Robot Hands OMRON E2V-X8B1-M1.
Flat head is only 5.5-mm thick.
Robotics cable ensures improved flexibility.
Operation indicator on the Sensor.
Easy-to-use connector. Field of view: Wide View (Long-distance).
Number of pixels: 350,000 pixels.
Color: PNP.
Field of view/Installation distance: Refer to figure 3 on p.20.
Inspection capabilities, camera options,
and communication options -- this powerful,
heavy weight has it all.
This Vision Sensor provides all of the best-selling,
features found in high-end models without the,
need as in vision system for a separate controller E2V-X8B1-M1.
This new Smart Camera was designed to attract,
potential customers to try the FQ2 Series. E3F3-R62M detection methods: Regression reflection type,
Wire lead out type,
Type: metal appearance; NPN output,
Threaded cylindrical phhotoelectric sensor, built-in amplifier,
Photoelectric sensor with proximity sensor appearance
High anti interference with optoelectronic -IC technology